This work presents point defects diagrams for the manganese oxide Mn1-delta O, both pure and doped with M3+ and M+ metal ions, and with all the types of defects in the cation sublattice considered. The diagrams were calculated using a novel method. The calculations were based on the data from the deviation from stoichiometry studies by many authors, in the temperature range of 1173-1830 K. The values of Delta G(0) of the formation of Frenkel-type defects and of manganese vacancies, were determined and their temperature dependence. The obtained results of the calculations indicate that the manganese oxide MnO reaches the stoichiometric composition near the decomposition pressure of the oxide (Mn/MnO). It was shown that character of the dependence of the sum of concentrations of electronic defects ([h(center dot)]+b[e']) on oxygen pressure is fully consistent with its dependence of the electrical conductivity. The values of parameter to, which is the ratio of the mobility of electrons and the mobility of electron holes (mu(e)/mu(h) = b), vary from 900 to 100. It was shown that even a small amount of the dope, M+, in (Mn1-yMy)(1-delta)O causes the shift of p(O2) towards higher oxygen pressures, where the oxide reaches the stoichiometric composition. In the range of the negative values of the deviation from the stoichiometry there is a significant concentration of interstitial manganese ions. As a result of the increase of the concentration of M3+ ions, the concentration of manganese vacancies increases and the concentration of electron holes decreases. (c) 2012 Elsevier B.V. All rights reserved.