A facile room-temperature electrochemical deposition process for germanium sulfide (GeSx) has been developed with the use of an ionic liquid as an electrolyte. The electrodeposition mechanism follows the induced codeposition of Ge and S precursors in ionic liquids generating GeSx films. The electrodeposited GeSx films were characterized by scanning electron microscopy-energy dispersive X-ray spectroscopy (SEM-EDS) and Raman and X-ray photoelectron spectroscopy (XPS). An aqueous-based Ag doping method was used to dope electrochemically grown GeSx films with controlled doping compared to the conventional process, which can be used in next-generation solid-state memory devices.