This work presents high density non-volatile memory devices by embedding multi-layers of similar to 1 nm Pt nanoparticles between Al2O3 tunneling, inter-particle, and blocking dielectric layers. Up to four layers of Pt nanoparticle embedded memory devices were fabricated using a unique Tilted Target sputter deposition method. A combination of angular deposition flux and self-limiting growth process resulted in the formation of nearly mono-dispersed metal nanoparticles at room temperature allowing the fabrication of multi-layer devices without the need for further annealing. Multi-layer Pt nanoparticle embedded memory devices showed an enhanced memory window dependent on the number of nanoparticle layers. The memory window of 14.68 V and an electron charge density of 2.6 x 10(13) cm(-2) were obtained at +/- 10 V sweeping gate voltage in quad-layer Pt nanoparticle embedded memory-a twofold increase when compared to the single-layer device. We also demonstrated that asymmetrical quad-layer Pt nanoparticle embedded memory reduced an initial charging and improved the charge retention property. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.036204jes] All rights reserved.