dGeTe thin films were deposited by Atomic Layer Deposition (ALD). The process was studied in detail to verify growth properties typical of ALD. Film compositions were determined to be stoichiometric with low impurity content. Film growth demonstrated characteristic ALD behavior with easily controlled film thickness and excellent conformality. The resistivity decrease during crystallization was six orders of magnitude. The crystallization properties of ALD GeTe, in general, were found to be similar to those of sputtered films. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.045112jes] All rights reserved.