화학공학소재연구정보센터
Journal of the Electrochemical Society, Vol.158, No.12, D715-D718, 2011
High-Speed Through Silicon Via(TSV) Filling Using Diallylamine Additive
High-speed copper electrodeposition is needed to optimize the TSV process with a high throughput. To inhibit electrodeposition on the top surface of the TSV, the ODT was microcontact-printed on the top surface. The ODT microcontact-printing effectively inhibits the copper electrodepositon on the top surface. With 1.0 ppm SDDACC, V-shapes were formed in the via cross sections and these shapes lead to bottom-up via filling.(9) Without microcontact-printing, and with 1.5 ppm SDDACC, V-shapes were again formed in the via cross sections and these shapes lead to bottom-up via filling. We succeeded in filling 10 mu m diameter and 70 mu m deep vias within 35 minutes without microcontact-printing. This was achieved by optimizing the SDDACC concentration with CVS measurements. The inhibition layer of the microcontact-printing does not speed up the TSV electrodeposition. The most important factor to speed up the TSV electrodeposition is optimization of the additives. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.076112jes] All rights reserved.