One-dimensional boron-doped submicron diamond rods (SDRs) were fabricated on diamond/Si substrates by oxygen plasma etching. The SDRs are similar to 4.5 mu m in height and similar to 383 nm in diameter. Iron oxide coated on SDRs is essential in the formation of one-dimensional SDRs. However, the as-etched SDRs suffer with high turn-on field (E(TO)) and low field emission current density (J(FE)) due to the iron oxide. A huge improvement in the field emission characteristics can be achieved by removing iron oxide using a wet-etch process in a diluted HCl (37%). After the wet-etch, the SDRs exhibit a low E(TO) value of 4.5 V/mu m (at 10 mu A/cm(2)) and a high J(FE) value of 30 mA/cm(2) (at 8.5 V/mu m). The FE emitter is only stable for a short period of time at high current stress owing to the rounding of the tips of SDRs. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3592207] All rights reserved.