화학공학소재연구정보센터
Journal of Materials Science, Vol.47, No.5, 2405-2410, 2012
Structural evolution of a Ta-filament during hot-wire chemical vapour deposition of Silicon investigated by electron backscatter diffraction
We report on the application of electron backscatter diffraction to investigate the structural changes of a tantalum filament operated at typical hot-wire chemical vapour deposition conditions for the synthesis of hydrogenated nanocrystalline silicon. Various tantalum-silicides, identified by electron backscatter diffraction, form preferentially along the length of the filament. The filament has a recrystallized Ta inner core and a TaSi(2) layer encapsulated with a Si layer at the cooler ends. The alpha Ta(5)Si(3), metastable Ta(5)Si(3) and Ta(2)Si phases formed in addition to recrystallized Ta and TaSi(2) at the centre regions. Cracks and porosity were prevalent throughout the length of the filament. The microstructural evolution of the aged tantalum filament can be ascribed to the thermal gradient along the filament length, recrystallization of Ta and the variation of silicon content within the filament.