Epitaxial NaNbO3 thin films were deposited on single crystal Rh substrates by pulsed laser deposition. The epitaxial NaNbO3 thin film exhibited the tetragonally stained structure with a c/a ratio of about 1.04 and a good ferroelectric property with the high remanent polarization (P-r) of about 40 mu C/cm(2). The piezoresponse force microscope study revealed that the epitaxial NaNbO3 thin film has a mosaic ferroelectric domain structure. A Pt/NaNbO3/Rh capacitor showed rapid ferroelectric switching behavior, which gives opportunity for a non-volatile memory application. (C) 2012 Elsevier B.V. All rights reserved.