By introducing excessive zinc during the growth process, degenerated Mg0.46Zn0.54O films have been prepared. The resistivity of the Mg0.46Zn0.54O films is only 0.053 Omega cm, and the electron concentration is 1.0 x 10(19) cm(-3), which is well above the Mott concentration of ZnO (2.9x 10(19) cm(-3)). The origin of such a high electron concentration can be attributed to the excessive zinc in the films. The results reported in this paper provide a route to conductive degenerated MgZnO films, thus may lay a ground for the fabrication of ZnO-based heterostructures or deep ultraviolet optoelectronic devices. (C) 2012 Elsevier B.V. All rights reserved.