We report the performance of a 1 eV GaNAsSb-based photovoltaic cell grown using a molecular beam epitaxy system equipped with a radio frequency (RF) plasma-assisted nitrogen source. The 1 mu m-thick photoabsorption layer contains 2% of N and 6% of Sb resulting in a GaNAsSb layer with bandgap energy of 1.0 eV. Under AM1.5G solar illumination condition with and without 850 nm long pass filter, the GaNAsSb-based photovoltaic cell demonstrates a J(sc) values of 15 and 32 mA/W, respectively. Deep level transient spectroscopy analysis reveals that the V(oc) of the photovoltaic cell could possibly be limited by the presence of arsenic antisite defects. (C) 2011 Elsevier B.V. All rights reserved.