Non-polar ZnO thin films were grown epitaxially on m-plane sapphire substrates using plasma-assisted molecular beam epitaxy. The film is (1 0 (1) over bar 0) oriented (m-plane) as identified by the X-ray diffraction pattern. The surface of ZnO film shows highly anisotropic morphology with stripes elongated along the c-axis. The nonintentionally doped non-polar ZnO film was grown under oxygen-rich condition, which exhibits weak p-type conductivity with a hole concentration of 1.3 x 10(16) cm(-3), a Hall mobility of 0.314 cm(2) V(-1) s(-1), and a resistivity of 1536 Omega cm. Room-temperature photoluminescence of the p-type non-polar ZnO shows a strong UV emission at similar to 3.307 eV and negligible deep level emission. (C) 2011 Elsevier B.V. All rights reserved.