Structures consisting of a single layer of silicon quantum dots in a SiO(2) matrix show interesting optoelectronic properties and potential use as energy selective filters, which are a crucial component for the realization of the hot carrier solar cell. In this work single layer silicon quantum dots in SiO(2) have been realized using a magnetron sputtering technique. Quantum dots are formed by annealing of a silicon rich oxide layer deposited between a thermally grown SiO(2) layer and a sputtered SiO(2) layer. The effects of a forming gas post-hydrogenation process on the photoluminescence of the single layer of quantum dots have been investigated in order to understand the photoluminescence mechanism. It was found that for sputtered silicon quantum dots in SiO(2) matrix the photoemission mechanisms are primarily due to quantum confinement and does not strongly rely on matrix defects. In addition, physical and optical properties of several thick silicon rich oxide layers, with different chemical compositions, have been investigated in order to optimize the stoichiometry of silicon rich oxide in the single layers. (C) 2011 Elsevier B.V. All rights reserved.