Self-aligned inversion-channel In0.75Ga0.25As metal-oxide-semiconductor field-effect transistors (MOSFETs) using molecular beam epitaxy (MBE) deposited Al2O3/Ga2O3(Gd2O3) [GGO] as gate dielectrics and TiN as metal gates were fabricated. The 1-mu m-gate-length In0.75Ga0.25As MOSFETs have achieved a maximum drain current of 1.23 mA/mu m, a peak transconductance of 464 mu S/mu m, and a peak field-effect electron mobility of 1600 cm(2)/V s. A new record of maximum drain current has been set, not only for III-V MOSFETs but also for all enhancement mode MOSFETs with similar device dimensions, regardless of channel materials and device configurations. (C) 2011 Elsevier B.V. All rights reserved.