Al0.52In0.48P photovoltaic detector has been fabricated using gas source molecular beam epitaxy and its characteristics have been measured in detail. The Al0.52In0.48P absorption layer shows a mismatch of +4.76 x 10(-4) to the GaAs substrate with a full width at half maximum of 22.5 arcsec. The dark current is only 0.78 pA at reverse bias of 500 mV and the R(0)A is about 1.7 x 10(8) Omega cm(2) at room temperature. The measured peak responsivity at zero bias is 0.287 A/W at 470 nm with 50% cut-on and cut-off wavelengths at 440 and 495 nm, respectively. (C) 2010 Elsevier B.V. All rights reserved.