Journal of Crystal Growth, Vol.323, No.1, 376-379, 2011
Electrical spin injection in InAs quantum dots at room temperature and adjustment of the emission wavelength for spintronic applications
We have observed room temperature (RT) electrical spin injection in an InAs quantum dot (QD) light emitting diode (LED) grown on a p-type GaAs substrate from a ferromagnetic Fe/Tb electrode with strong out-of-plane anisotropy in remanence, i.e. without applied magnetic field. The QDs in the LED emit at 1275 nm (ground state luminescence), which is beyond the range for highly sensitive detectors, and therefore not optimum for various applications, e.g. quantum information studies. We will present two different ways to blue-shift the emission wavelength and discuss the advantages and drawbacks of the experiments. (C) 2010 Elsevier B.V. All rights reserved.
Keywords:Molecular beam epitaxy;Gallium compounds;Magnetic materials;Semiconducting III-V materials;InAs quantum dots;Light emitting diodes