We realized strain control method for InGaAs/AlAs/AlAsSb material systems without change of layered structure and degradation of crystal quality. The strain control method was simply achieved by the interface termination between AlAs and AlAsSb layers. In order to evaluate the strain control method and optical quality, multiple quantum wells (MQWs) were grown. X-ray diffraction measurements revealed that strain control of 0.3% was achieved without degradation of the crystal quality when the interface termination was changed from As to Sb. In addition, optical absorption measurements of the MQWs revealed that the optical quality did not change if the interface termination was changed. (C) 2011 Elsevier B.V. All rights reserved.