We report on cryogenic implantation of BF2+ at doses near the amorphization threshold and its impact on junction characteristics. BF2+ implant at a dose of 8x10(13) cm(-2) does not amorphize silicon at room temperature. When implanted at -100 degrees C, it forms a 30 - 35 nm thick amorphous layer, significantly reducing the depth of the boron distribution, both as-implanted and after anneals. The cryogenic BF2+ implant also creates a shallower n(+)-p junction by steepening profiles of arsenic that is subsequently implanted in the surface region. It reduces sheet resistance after two sequential anneals including a 1025 degrees C spike anneal, with no residual defects after recrystallization. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.013202esl] All rights reserved.