Inversion-mode n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 as gate dielectric were fabricated on two crystalline surfaces: InP (100) and InP (111) A. A record high drain current of 600 mu A/mu m is obtained on InP (111) A surface at V-ds = V-gs = 3 V with a gate length of 1 mu m and Al2O3 dielectric thickness of 8 nm. The maximum drain current is greater by a factor of 3.5 on the InP (111) A surface compared to devices fabricated on the InP (100) surface at the same bias conductions. During room temperature positive gate stress, "zero" drain current drift is observed for InP (111) A devices, in great contrast to InP(100) devices. The greater maximum drain current and the "zero" drain current drift on InP (111) A can be explained by oxide band bending caused by trap neutral level shifts and low border trap density. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.012202esl] All rights reserved.