Due to a low dielectric constant (k = 4-4.5) and high density (1.8-2.0 g/cm(3)), Plasma Enhanced Chemically Vapor Deposited (PECVD) boron nitride (BN) is an intriguing Cu diffusion barrier material for use in low-k/Cu interconnects. However, relatively little is known about the electrical leakage behavior of BN in Cu interconnects or the Schottky barrier formed at the interface between these two materials. In this regard, x-ray photoelectron spectroscopy (XPS) has been utilized to determine the Schottky barrier present at the interface between polished Cu substrates and PECVD BN. Our measurements indicate a substantial barrier of 3.25 +/- 0.25 eV for this interface. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.015112esl] All rights reserved.