We report on the fabrication of organic thin-film transistors (OTFTs) with a reverse-offset-printed Ag metal source/drain (S/D) electrode pattern. The printed electrodes had a channel length of less than 5 mu m and resistivity of 3 x 10(-6) Omega cm. The OTFTs were fabricated from regioregular poly(3-hexylthiophene) as the semiconductor and poly(methyl methacrylate) as the gate insulator. The transfer and output characteristics of a top-gate OTFT with a channel length of 5 mu m were evaluated. Here we discuss in detail the technological challenges encountered with reverse offset printing and the failure modes. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3591435] All rights reserved.