Aluminum films were prepared on H₂-plasma pretreated TiN substrates at deposition temperatures of 60-250℃ by metallorganic chemical vapor deposition using dimethylethylamine alane as a precursor. The films were highly pure and the growth rates were 3-50 mm/min, where the lowest deposition temperature was 60℃. The resistivity was as low as 2.8μΩcm. High substrate temperatures tended to favor a low resistivity and smooth surface morphology of the films, compared to films with a low temperature at a given thickness. Numerous empty pores appeared in the Al films deposited at a temperature below 150℃ when the film thickness exceeded 20 nm. The number of these pores tended to increase with decrease in temperature. However, in films deposited at temperatures above 200℃, there were no pores and the large grains were interconnceted to a high degree. Higher deposition temperatures yielded a greater preference of the (111) orientation of Al films.