Chemical Physics Letters, Vol.501, No.4-6, 159-165, 2011
The surprising oxidation state of fumed silica and the nature of water binding to silicon oxides and hydroxides
X-ray photoelectron spectroscopy (XPS) data demonstrate that the average formal oxidation state of silicon in fumed silica (CAB-O-SIL (R)) is +1 as opposed to the usual +4. Electronic structure calculations on model molecular clusters and comparison with XPS data for silicon compounds in known oxidation states suggest less hydrophilic character for CAB-O-SIL (R) than the oxides of silicon with Si in an average formal +3 or +4 oxidation state. Once the +3 oxidation state is formed, water on the fumed silica surface facilitates the ready conversion of the Si in an average +3 oxidation state to an average + 4 oxidation state. (C) 2010 Elsevier B.V. All rights reserved.