We use the third harmonics of Nd:YAG laser (lambda = 355 nm) for simultaneous precursor conversion and dopant activation on sol-gel ITO thin films at a laser fluence range of 700-1000 mJ/cm(2). A minimum resistivity of 5.37 x 10(-2) Omega-cm with a corresponding carrier concentration of 6 x 10(19) cm(-3) is achieved at laser irradiation fluence of 900 mJ/cm(2). X-ray photoelectron analysis reveals that extremely high tin concentration of 19.4 at.% and above is presented in the laser-cured ITO thin films compared with 8.7 at.% in the 500 degrees C thermally cured counterpart. These excess tin-ions form complex defects, which contribute no free carriers but act as scattering centers, causing inferior electrical properties of the laser-cured films in comparison with the thermally cured ones. (C) 2011 Elsevier B.V. All rights reserved.