Bi2Sr2CaCu2O8+delta (Bi2212) thin film is an important superconducting material ascribed to its high transition temperatures and low toxicity, but the application of Bi2212 thin films is limited due to the appearances of intergrowth and impurity phases. To achieve high-quality Bi2212 thin film by molecular beam epitaxy (MBE), the oxidizing gas pressure and substrate temperature are the key parameters. Here, the phase formation in Bi-based thin films grown by MBE was studied as a function of oxidizing gas pressure and substrate temperature. Furthermore, the thermodynamic parameters have been investigated through enthalpy change. This study indicates that the substrate temperature was increased with the enhancing of ozone partial pressure when the composition ratio is fixed, Bi2212 single phase can be formed. Moreover, the chemical stability decreases in the order of Bi2Sr2CuO6+delta > Bi2212 > Bi2Sr2Ca2Cu3O10+delta. (C) 2011 Elsevier B.V. All rights reserved.