Applied Surface Science, Vol.257, No.15, 6792-6798, 2011
Investigation of the (root 3 x root 3)R30 degrees-Cu2Si/Cu(111) surface alloy using DFT
The electronic structure of the FCC, HCP and 2-fold bridge phases of the (root 3 x root 3)R30 degrees-Cu2Si/Cu(1 1 1) surface alloy have been investigated using LCAO-DFT. Analysis of the total electron density, partial density-of-states (PDOS) and crystal orbital overlap population (COOP) curves for the system have shown a surprising similarity between the intra- and inter-layer Si-Cu bond for each phase. Low hybridization between the Si 3s and 3p orbitals results in a low directionality of the Si-Cu bond within each of phase. The Si 3s orbitals are shown to form covalent bonds with their surrounding Cu atoms whereas the Si 3p and 3d orbitals are shown to form combinations of covalent and metallic bonds. The Si-Cu interaction is shown clearly to extend to the second layer of the alloy in deference to previous studies of Si/Cu alloys. (C) 2011 Elsevier B. V. All rights reserved.
Keywords:Cu2Si;Cu(111);Alloy;DFT;GGA;Crystal orbital overlap population;COOP;Partial density of states;PDOS