Silicon nitride films have been deposited at a low temperature (70 degrees C) by inductively coupled plasma chemical vapor deposition (ICP-CVD) technique and their physical and chemical properties were studied. For a deposited SiN sample, beta-phase was observed and refractive index of 2.1 at 13.18 nm/min deposition rate was obtained. The attained stress of 0.08 GPa is lower as compared to the reported value of 1.1 GPa for SiN thin films. To study the deposited film, characterization was performed using X-ray photoelectron spectra (XPS). X-ray diffraction (XRD), micro Raman spectroscopy, Fourier transfer infrared spectroscopy (FTIR), cross-section scanning electron microscopy (SEM) and atomic force microscopy (AFM). (C) 2011 Elsevier B.V. All rights reserved.