An effective way to prepare atomically-ordered rutile TiO2(1 1 0) surfaces that have distinct step and terrace structures suitable for oxide thin film deposition is demonstrated. Only a two-step procedure, consisting of 20% HF etching and UHV-annealing at 1100 degrees C, was required to yield a clean (1 x 1) structure with step and terrace structures. Investigation of the surface using scanning tunneling microscopy, low-energy electron diffraction, and Auger electron spectroscopy reveals that carbon contamination is removed at around 800 degrees C, and straight steps with clear terraces appear at around 1000 degrees C. (c) 2010 Elsevier B.V. All rights reserved.