In this study, Cu(In,Ga)(Se, S)(2) (CIGSS) thin films were deposited onto a bi-layer Mo coated soda-lime glass by co-sputtering a chalcopyrite Cu(In,Ga)Se-2 (CIGS) quaternary alloy target and an In2S3 binary target. A one-stage annealing process was performed to form CIGSS chalcopyrite phase without post-selenization. Experimental results show that CIGSS films were prepared by the proposed co-sputter process via CIGS (70W by radio frequency) and In2S3 (30W by direct current) with a substrate temperature of 373 K, working pressure of 0.67 Pa, and one-stage annealing at 798 K for 30 min. The stoichiometry ratios of the CIGSS film were Cu/(In + Ga) = 0.92, Ga/(In + Ga) = 0.26, and Se/(S) = 0.49 that approached device-quality stoichiometry ratio (Cu/(In + Ga) < 0.95, Ga/(In + Ga) < 0.3, and (Se/ S) approximate to 0.5). The resistivity of the sample was 14.8 Omega cm, with a carrier concentration of 3.4 x 10(17) cm(-3) and mobility of 1.2cm(2) V-1 s(-1). The resulting film exhibited p-type conductivity with a double graded band-gap structure. (c) 2010 Elsevier B.V. All rights reserved.