Annealing-temperature dependence of the thermal stability and chemical bonding states of AlOxNy/SiO2/Si gate stacks grown by metalorganic chemical vapor deposition (MOCVD) using new chemistry was investigated by synchrotron radiation photoemission spectroscopy (SRPES). Results have confirmed the formation of the AlN and AlNO compounds in the as-deposited samples. Annealing the AlOxNy samples in N-2 ambient in 600-800 degrees C promotes the formation of SiO2 component. Meanwhile, there is no formation of Al-O-Si and Al-Si binding states, suggesting no interdiffusion of Al with the Si substrate. A thermally induced reaction between Si and AlOxNy to form volatile SiO and Al2O is suggested to be responsible for the full disappearance of the Al component that accompanies annealing at annealing temperature of 1000 degrees C. The released N due to the breakage of the Al-N bonding will react with the SiO2 interfacial layer and lead to the formation of the Si-3-N-O/Si-2-N-O components at the top of Si substrate. These results indicate high temperature processing induced evolution of the interfacial chemistry and application range of AlOxNy/Si gate stacks in future CMOS devices. (c) 2010 Elsevier B. V. All rights reserved.