Advanced Materials, Vol.23, No.7, 902-902, 2011
Low-Power High-Performance Non-Volatile Memory on a Flexible Substrate with Excellent Endurance
Very high performance Ni/GeOx/HfON/TaN non-volatile resistive memory is fabricated using the covalently bonded dielectric GeOx and metal oxynitride HfON, as well as low cost electrodes. The device shows low set and reset powers, good 85 degrees C retention, and 10(5) endurance, which are near to the characteristics of existing commercial flash memory.