Advanced Materials, Vol.23, No.5, 624-624, 2011
Spectroscopic Characterization of Charged Defects in Polycrystalline Pentacene by Time- and Wavelength-Resolved Electric Force Microscopy
Spatial maps of topography and trapped charge are acquired for polycrystalline pentacene thin-film transistors using electric and atomic force microscopy. In regions of trapped charge, the rate of trap clearing is studied as a function of the wavelength of incident radiation.