Poly(9-(2-(4-vinyl(benzyloxy)ethyl)-9H-carbazole)) (PVBEC) brushes, have been successfully prepared on the silicon surfaces via surface-initiated atom transfer radical polymerization (ATRP). Conductance switching at a voltage of about 2.1 V is observed in the memory device based on the PVBEC brushes. The fabricated device shows the good memory characteristics as the ON/OFF current ratio up to 10(5), and enduring 10(6) read cycles under -1 V pulse voltages. Compared with those of the conventional Si/PVBEC/Al device fabricated by spin-coating, the switch voltage is lower and the ON/OFF current ratio is higher in the volatile Si-g-PVBEC/Al memory device. (C) 2011 Elsevier Ltd. All rights reserved.