In this report, we have introduced a revision of the chemical treatment influence on the surface thermodynamic properties of silicon dioxide (SiO2) and silicon nitride (Si3N4) solid thin layers. Some characterization techniques might be used to quantify the thermodynamic properties of solid surface and predict its ability in the adhesion phenomenon. In this work, we have used static and dynamic contact angle (CA) measurements to characterize both dioxide solid surfaces being treated by using the two procedures of cleaning and chemical activation. Qualitative and quantitative concepts of analysis, using the Van Oss approach, are based on the determination of dioxide surface hydrophilic and hydrophobic features and the thermodynamic parameters such as free energy, acid, base, and Lewis acid base surface tension components. Electrochemical capacitance-potential measurements were carried out to study the reactivity of both silicon dioxide and silicon nitride surfaces for pH variation. Furthermore, the surface roughness of these insulators was examined by using the contact angle hysteresis (CAH) measurements and atomic force microscopy (AFM). It was concluded that CA technique can be used as a suitable and base method for the it of surface wettability and for the control of surface wetting behavior.