Wafer bonding technology is applied to the GaN/quantum dots/GaN system, where CdSSe/ZnS core/shell Quantum Dots serve as both the active layer and the binding layer. Photoluminescence is observed from quantum dots following wafer bonding at various temperatures under ultra high vacuum conditions. Temperature dependences of bond strength and photoluminescence properties are characterized. Annealing at elevated temperature to form wafer bonds degrades photoluminescence intensity and slightly blue shifts the emission wavelength. Transmission Electron Microscopy is used to study the physical properties of vacuum annealed QDs, in which enlargement of QD particle size is observed. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3561696] All rights reserved.