This paper discusses the performance of different wet chemical etchants on InGaN. It is shown that certain etchants can be used to chemically etch and remove appreciable amounts of InGaN even though the etch rate is not as high as observed for other III-V materials. The performance of etchants studied here were (i) two different ratios of HF, HNO3, (ii) cyclic usage of NH4OH followed by HCl, (iii) hot H2SO4 and H3PO4 mixture, and (iv) conc. NH4OH. The etched surfaces have then been analyzed by x-ray photoelectron spectroscopy (XPS). Different etch residues were observed on the top surface. These results suggest an alternative to reactive plasma etching or photo-enhanced electrochemical etching of InGaN type materials. Based on the observed performance of the etchants studied, it was also possible to segregate the surface cleaning protocols and etchants. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3574036] All rights reserved.