Cobalt oxide thin films have been deposited with remote plasma atomic layer deposition (ALD) within a wide temperature window (100-400 degrees C), using CoCp2 as a cobalt precursor and with remote O-2 plasma as the oxidant source. The growth rate was 0.05 nm/cycle and both the precursor dosing and plasma exposure exhibit saturation after 2 s, all independent of the substrate temperature. This novel combination resulted in the deposition of high density (similar to 5.8 g/cm(3)), stoichiometric Co3O4 showing a preferential (111) orientation for all temperatures. X-ray diffraction, spectroscopic ellipsometry, and Fourier transform infrared spectroscopy independently indicate an increasing crystallinity with increasing substrate temperature, whereas the surface roughness remains low (<= 1 nm). CO2 and H2O are detected by mass spectrometry measurements as reaction by-products during the remote O-2 plasma step, revealing a combustion-like reaction process. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3552616] All rights reserved.