We report on PbSe thin films serving as an absorber in solar cell structures, CdS(100 nm)/Sb2S3(250 nm)/PbSe(100-250 nm). The cells are prepared by sequential chemical deposition of the films on a commercial SnO2:F coated sheet glass. These cells show V-oc of 690 mV and J(sc) of 3.5 mA/cm(2) and a conversion efficiency of 0.69% under sunlight. Two distinct routes are taken to deposit PbSe thin films of 100-250 nm thickness: N,N-dimethylselenourea (SU) or sodium selenosulfate (SS) as the source of selenide ions in the bath. These films are p-type with an electrical conductivity of 0.5 (Omega cm)(-1) and optical bandgaps of 0.68 eV (SU) and 0.85 eV (SS) at a film thickness of 150 nm. Without the PbSe absorber, a CdS/Sb2S3 cell has V-oc of 595 mV, but its J(sc) is low, 0.003 mA/cm(2). In CdS/Sb2S3/PbSe (SU or SS) cells, J(sc) is higher by a factor of thousand, and it is consistently higher for a larger PbSe film thickness. Thus, PbSe performs the role of a p(+) optical absorber in the cell, contributing to the J(sc) of the cell. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3467844] All rights reserved.