SrBi4Ti4O15 (SBTi) and Bi-excess and Sr-deficient SBTi (Sr-deficient SBTi, Sr0.8Bi4.13Ti4O15) thin films were deposited on Pt/Ti/SiO2/Si (100) substrates using a sol-gel method. Structure and electric properties were investigated systematically. These films were random oriented. The remnant polarization (2P(r)) of SBTi film was about 25.3 mu C/cm(2), which was larger than the reported value of SBTi thin film. The film with Sr-deficient and Bi-excess composition showed a very large remnant polarization of 36.6 mu C/cm(2). The capacitance-voltage (C-V) characteristics of both the films showed normal ferroelectric behavior. The Curie temperatures of the same Sr-deficient and Bi-excess component ceramics sample increased slightly in comparison with that of SBTi. More importantly, the Sr-deficient and Bi-excess SBTi thin film showed high fatigue resistance against continuous switching up to 4.4 x 10(10) cycles.