AgGaxIn1-xSe2 single crystals with x=0.4 have been grown by the horizontal Bridgman technique for nonlinear optical application requires phase matching. High purity polycrystalline synthesis of AgGaxIn1-xSe2 was carried out at 850 degrees C, which is a relatively lower temperature compared to those in earlier reports, thus reducing secondary phase formation. An average Ga:In ratio of 62:38 (+/- 3%) was measured using energy dispersive spectroscopy (EDS). As grown, a single crystal shows very high IR transmission of similar to 65% in the spectral range of 4000-600 cm(-1). There was no significant change in its IR transmission after annealing it at 500 degrees C for 20 days in vacuum in the presence of AgGaxIn1-xSe2 powder. This indicates a low concentration of defects in the crystal. The results demonstrate that the improved new synthesis method for crystal growth was promising and that the quality of the crystal was good. (C) 2010 Elsevier B.V. All rights reserved.