Semi-insulating Cd0.9Zn0.1Te:Pb crystals were grown by the vertical Bridgman method. Measurements of the current deep level transient spectroscopy (I-DLTS) revealed three trap levels in this material. Unlike other compensating dopants, CdZnTe:Pb samples do not show any Cd-vacancies defects and A-center levels. We subjected them to temperature-gradient annealing in Cd overpressure at 490-717 degrees C, and recorded an exponential relationship between the annihilation time of Te precipitates and the annealing temperature. The energy resolution of an annealed CdZnTe:Pb detector, tested using a Cs-137 radioactive source, gave an energy resolution of 2.5%. (C) 2009 Elsevier B.V. All rights reserved.