We demonstrated that it is possible to grow single crystal-like Ge films on a glass substrate using a biaxially textured CaF2 buffer layer at a low temperature of similar to 400 degrees C. The CaF2 buffer layer with the (1 1 1) < 1 2 1 > biaxial orientation was grown by the oblique angle deposition technique and characterized by X-ray pole figure analysis. Transmission electron microscopy revealed that the Ge(1 1 1) heteroepitaxial films possess a single crystal-like structure with small angle grain boundaries of <= 2 degrees misorientation. (C) 2009 Elsevier B.V. All rights reserved.