Solution processed IZTO thin film transistor on silicon nitride dielectric layer

Bong-Jin Kim; Hyung-Jun Kim; Tae-Sik Yoon; Yong-Sang Kim; Doo-Hyoung Lee; Youngmin Choi; Byung-Hwan Ryu; Hyun Ho Lee

Journal of Industrial and Engineering Chemistry, Vol.17, No.1, 96-99, January, 2011

Bong-Jin Kim, Hyung-Jun Kim, Tae-Sik Yoon¹, Yong-Sang Kim¹, Doo-Hyoung Lee², Youngmin Choi², Byung-Hwan Ryu², and Hyun Ho Lee^†

Department of Chemical Engineering, Myongji University, Gyeonggi, 449-728, Republic of Korea
¹Department of Nano Science and Engineering, Myongji University, Gyeonggi 449-728, Republic of Korea
²Advanced Material Division, KRICT, Yuseong, Daejeon 305-600, Republic of Korea

E-mail:

Solution process-based inorganic indium-zinc-tin oxide semiconductor layer was applied to fabricate a thin film transistor (TFT) by annealing at 600 ℃ on plasma enhanced chemical vapor deposited (PECVD) silicon nitride (SiNx) dielectric layer. The spin-coated indium-zinc-tin oxide (IZTO) transistor has a fieldeffect mobility of 4.36 cm2/V s with on/off ratio of 105 having the subthreshold voltage shift of 0.537 V/ dec. The device characterization and surface analysis after annealing were performed and compared with results before annealing. Our results offer the feasibility of solution-based oxide semiconductor transistors for cost-effective display or other electronic devices.

Keywords:Indium.zinc.tin oxide;TFT;Silicon nitride

[References]

Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M, Hosono H, Nature., 432, 488 (2004)
Shimoda T, Matsuki Y, Furusawa M, Aoki T, Yudasaka I, Tanaka H, Iwasawa H, Wang, M. Miyasaka D, Takeuchi Y, Nature., 440, 04613 (2006)
Chang YJ, Lee DH, Herman GS, Chang CH, Electrochem. Solid-State Lett., 10, H35 (2007)
Lee DH, Chang YJ, Herman GS, Chang CH, Adv. Mater., 19(6), 843 (2007)
Lee DH, Han SY, Herman GS, Chang CH, J. Mater. Chem., 19, 3135 (2009)
Koo CY, Kim D, Jeong S, Moon J, Park C, Jeon M, Sin WC, Jung J, Woo HJ, Kim SH, Ha J, J. Kor. Phys. Soc., 53, 218 (2008)
Choi CG, Seo SJ, Bae BS, Electrochem. Solid State Lett., 11(1), H7 (2008)
Seo SJ, Choi CG, Hwang YH, Bae BS, J. Phys. D: Appl. Phys., 42, 035106 (2009)
Lee JH, Chae JH, Nahm KP, Kang MS, J. Ind. Eng. Chem., 15(645) (2009)
Park WJ, Shin HS, Ahn BD, Kim GH, Lee SM, Kim KH, Kim HJ, Appl. Phys. Lett., 93, 083508 (2008)

[Related Articles]

[1] Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M, Hosono H, Nature., 432, 488 (2004)

[2] Shimoda T, Matsuki Y, Furusawa M, Aoki T, Yudasaka I, Tanaka H, Iwasawa H, Wang, M. Miyasaka D, Takeuchi Y, Nature., 440, 04613 (2006)

[3] Chang YJ, Lee DH, Herman GS, Chang CH, Electrochem. Solid-State Lett., 10, H35 (2007)

[4] Lee DH, Chang YJ, Herman GS, Chang CH, Adv. Mater., 19(6), 843 (2007)

[5] Lee DH, Han SY, Herman GS, Chang CH, J. Mater. Chem., 19, 3135 (2009)

[6] Koo CY, Kim D, Jeong S, Moon J, Park C, Jeon M, Sin WC, Jung J, Woo HJ, Kim SH, Ha J, J. Kor. Phys. Soc., 53, 218 (2008)

[7] Choi CG, Seo SJ, Bae BS, Electrochem. Solid State Lett., 11(1), H7 (2008)

[8] Seo SJ, Choi CG, Hwang YH, Bae BS, J. Phys. D: Appl. Phys., 42, 035106 (2009)

[9] Lee JH, Chae JH, Nahm KP, Kang MS, J. Ind. Eng. Chem., 15(645) (2009)

[10] Park WJ, Shin HS, Ahn BD, Kim GH, Lee SM, Kim KH, Kim HJ, Appl. Phys. Lett., 93, 083508 (2008)