EFFECT OF FLUORINE CHEMISTRY IN THE REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION OF SILICON FILMS FROM Si2H6-SiF4-H2

Kim DH; Lee IJ; Rhee SW; Moon SH

Korean Journal of Chemical Engineering, Vol.12, No.5, 572-575, November, 1995

EFFECT OF FLUORINE CHEMISTRY IN THE REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION OF SILICON FILMS FROM Si₂H₆-SiF₄-H₂

Kim DH, Lee IJ, Rhee SW, Moon SH

SiF₄ was added into Si₂H₆-H₂ to deposit polycrystalline silicon films at low temperatures around 400℃ in a remote plasma enhanced chemical vapor deposition reactor. It was found out that the fluorine chemistry obtained from SiF₄ addition had an influence on the chemical composition, crystallinity, and silicon dangling bond density of the film. The fluorine chemistry reduced the amount of hydrogen and oxygen incorporated into the film and also suppressed the formation of powders in the gas phase, which helped the crystallization at low temperatures. Effect of SiF₄ concentration as well as the deposition temperature was also significant.

Keywords:Chemical Vapor Deposition;Silicon Films;Plasma Deposition;Fluorine Chemistry;Polysilicon Films

[References]

Bellamy LJ, The Infrared Spectra of Complex Molecules (Chapman and Hall, London), Vol. 1, 3rd ed., p. 380 (1975)
Fang CJ, Ley L, Shanks HR, Gruntz KJ, Cardona M, Phys. Rev., B, Condens. Matter, 22, 6140 (1980)
Hanna J, Kamo A, Komiya T, Shimizu I, Kokado H, J. Non-Cryst. Solids, 114, 172 (1989)
Johnson NM, Ready SE, Boyce JB, Donald CD, Wolff SH, J. Appl. Phys. Lett., 53(17), 1626 (1988)
Kim SC, Jung MH, J. Appl. Phys. Lett., 58(3), 281 (1991)
Langford AA, Fleet ML, Nelson BP, Lanford WA, Maley N, Phys. Rev., B, Condens. Matter, 45(13), 367 (1992)
Lee KY, Chung CW, Han JH, Rhee S, Moon SH, J. Electrochem. Soc., 139, 3539 (1992)
Nagamine K, Yamada A, Konagai M, Takahashi M, Jpn. J. Appl. Phys., 26, L951 (1986)
Nagahara T, Fujimoto K, Kohno N, Kashiwagi Y, Kakinoki H, Jpn. J. Appl. Phys., 31, 4555 (1992)
Nakayama Y, Takuma Y, Akiyama K, Otsuchi T, Kawamura T, Jpn. J. Appl. Phys., 23(7), L470 (1984)
Nishida S, Shiimoto T, Yamada A, Karasawa S, Konagai M, Takahashi K, Appl. Phys. Lett., 49, 79 (1986)
Okada Y, Chen J, Campbell IH, Fauchet PM, Wagner S, J. Non-Cryst. Solids, 114, 816 (1989)
Shimada T, Katayama Y, Horigome S, Jpn. J. Appl. Phys., 19, L265 (1980)
Thompson HW, Spectrochim. Acta, 16, 238 (1960)
Toyoshima Y, Arai K, Matsuda A, Tanaka K, Appl. Phys. Lett., 56(16), 1540 (1990)
Toyoshima Y, Arai K, Matsuda A, Tanaka K, Appl. Phys. Lett., 57(10), 1028 (1990)
Wadayama T, Kayama H, Hatta A, Suetaka W, Hanna J, Jpn. J. Appl. Phys., 29, 1884 (1990)
Yamada A, Jia Y, Konagai M, Takahashi K, Jpn. J. Appl. Phys., 28, L2284 (1989)
Zanzucchi PJ, "Semiconductors and Semimetals, ed., Pankove, J. (Academic Press, New York), Vol. 21B, p. 113 (1984)

[Referenced By]

[1] Bellamy LJ, The Infrared Spectra of Complex Molecules (Chapman and Hall, London), Vol. 1, 3rd ed., p. 380 (1975)

[2] Fang CJ, Ley L, Shanks HR, Gruntz KJ, Cardona M, Phys. Rev., B, Condens. Matter, 22, 6140 (1980)

[3] Hanna J, Kamo A, Komiya T, Shimizu I, Kokado H, J. Non-Cryst. Solids, 114, 172 (1989)

[4] Johnson NM, Ready SE, Boyce JB, Donald CD, Wolff SH, J. Appl. Phys. Lett., 53(17), 1626 (1988)

[5] Kim SC, Jung MH, J. Appl. Phys. Lett., 58(3), 281 (1991)

[6] Langford AA, Fleet ML, Nelson BP, Lanford WA, Maley N, Phys. Rev., B, Condens. Matter, 45(13), 367 (1992)

[7] Lee KY, Chung CW, Han JH, Rhee S, Moon SH, J. Electrochem. Soc., 139, 3539 (1992)

[8] Nagamine K, Yamada A, Konagai M, Takahashi M, Jpn. J. Appl. Phys., 26, L951 (1986)

[9] Nagahara T, Fujimoto K, Kohno N, Kashiwagi Y, Kakinoki H, Jpn. J. Appl. Phys., 31, 4555 (1992)

[10] Nakayama Y, Takuma Y, Akiyama K, Otsuchi T, Kawamura T, Jpn. J. Appl. Phys., 23(7), L470 (1984)

[11] Nishida S, Shiimoto T, Yamada A, Karasawa S, Konagai M, Takahashi K, Appl. Phys. Lett., 49, 79 (1986)

[12] Okada Y, Chen J, Campbell IH, Fauchet PM, Wagner S, J. Non-Cryst. Solids, 114, 816 (1989)

[13] Shimada T, Katayama Y, Horigome S, Jpn. J. Appl. Phys., 19, L265 (1980)

[14] Thompson HW, Spectrochim. Acta, 16, 238 (1960)

[15] Toyoshima Y, Arai K, Matsuda A, Tanaka K, Appl. Phys. Lett., 56(16), 1540 (1990)

[16] Toyoshima Y, Arai K, Matsuda A, Tanaka K, Appl. Phys. Lett., 57(10), 1028 (1990)

[17] Wadayama T, Kayama H, Hatta A, Suetaka W, Hanna J, Jpn. J. Appl. Phys., 29, 1884 (1990)

[18] Yamada A, Jia Y, Konagai M, Takahashi K, Jpn. J. Appl. Phys., 28, L2284 (1989)

[19] Zanzucchi PJ, "Semiconductors and Semimetals, ed., Pankove, J. (Academic Press, New York), Vol. 21B, p. 113 (1984)