Ion-cut layer transfer of (110) InP was investigated as an alternative to (100) InP. The use of (110) InP allows for the cleavage plane to be parallel to the substrate surface facilitating transfer. InP donors were pattern-masked, allowing for selective hydrogen implantation. The implanted wafers were bonded to acceptor substrates and transfer was initiated. The surface of the transferred regions was observed to be flatter than those obtained on (100) InP. Hall effect measurements showed the mobility in the masked regions to be unaffected by transfer. The process is extendable to the transfer of finished device structures into integrated systems. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3428748] All rights reserved.