The heteroepitaxial growth of cubic silicon carbide (3C-SiC) films on AlN/Si(100) substrates is demonstrated using a modified precursor feeding procedure of a chemical vapor deposition process. A thin (150 nm) SiC buffer layer is formed during the temperature ramp from 600 to 1200 degrees C in the presence of the methyltrichlorosilane precursor and hydrogen gas. The deposited 3C-SiC thin film exhibits a sharp Raman transverse optical 3C-SiC peak, a strong X-ray diffraction intensity for the SiC(111) peak, and an atomically abrupt SiC/AlN interface. These characteristics support that this SiC/AlN/Si layered structure is promising for the electrical isolation of top SiC layer from Si(100) substrate. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3418619] All rights reserved.