In this study, we successfully fabricated high-kappa Ir/TiCeO/TaN metal-insulator-metal (MIM) capacitors using a dual-plasma treatment on a bottom TaN electrode. The plasma treatment suppressed the growth of the bottom interfacial layer to largely improve capacitor performance at a 400 C thermal budget. The Ir/TiCeO/TaN MIM capacitor achieved a high capacitance density of similar to 17 fF/mu m(2) at a 22 nm thickness and a low quadratic coefficient of capacitance (VCC-alpha) of 866 ppm/V-2 at a 10.3 fF/mu m(2) density. The good performance is due to the combined effects of a dual-plasma interface treatment, higher-kappa TiCeO dielectrics, and a high work-function Ir metal. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3294495] All rights reserved.