In this work, direct experimental evidence of the excitation energy transfer from silicon quantum dots (Si-QDs) to Nd ions has been given based on photoluminescence (PL) and PL excitation measurements in a wide spectral range. The indirect excitation of Nd ions by transfer from excited Si-QDs is possible and even more efficient at higher energy levels (I-4(9/2)-> D-4(3/2), D-4(5/2)) than the indirect excitation reported up to now at lower energy (I-4(9/2)-> F-4(3/2) -F-4(7/2)) levels.