REACTION KINETICS OF SILICON ETCHING IN HF-K2Cr2O7-H2O SOLUTION

Seo YH; Nahm KS; Hahn YB; Kim CB

Korean Journal of Chemical Engineering, Vol.11, No.2, 89-95, April, 1994

REACTION KINETICS OF SILICON ETCHING IN HF-K₂Cr₂O₇-H₂O SOLUTION

The reaction kinetics of silicon etching in HF-K₂Cr₂O₇-H₂O solution was studied experimentally. The etch rates were measured with varying HF and K₂Cr₂O₇-H₂O concentrations, agitation speed, reaction temperature and time. The etch rates of n-and p-Si(100) were both similar. The etched surfaces consisted mainly of silicon and showed a relatively smooth and planar morphology. At sufficiently high HF concentration, the etch rate was increased with increasing K₂Cr₂O₇-H₂O concentration due to the increase of hole formation on the silicon surface. However, at low HF concentration, the etch rate maintains low value and increases very slowly because of insufficient hole concentration for etching reaction. The apparent activation energy was about 7.8kcal/g-mole, and the rate equation for the silicon etching reaction in HF-K₂Cr₂O₇-H₂O solution was obtained as
-r_Si = 600 exp(-3900/T) C_K2Cr2O7^0.5C_HF³
at HF concentrations greater than 8M.

[References]

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Huo DT, Yan MF, Wynn JD, Wilt DP, J. Electrochem. Soc., 136, 3094 (1989)
Booinger D, Iiga S, Matsumoto O, Solid State Technol., May, 111 (1984)
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d'Aragona FS, J. Electrochem. Soc., 119, 948 (1972)
Jenkins MW, J. Electrochem. Soc., 124, 757 (1977)
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Robbins H, Schwartz B, J. Electrochem. Soc., 106, 505 (1959)
Robbins H, Schwartz B, J. Electrochem. Soc., 107, 108 (1960)
Robbins H, Schwartz B, J. Electrochem. Soc., 123, 1903 (1976)
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Kelly JJ, Noyyen PHL, Electrochim. Acta, 29, 589 (1984)
Seidel H, Csepregi L, Hewberger A, Baumgartel H, J. Electrochem. Soc., 137, 3512 (1990)
Zhang XG, Collins SD, Smith RL, J. Electrochem. Soc., 136(5), 1561 (1989)
Matsumura M, Morrison SR, J. Electroanal. Chem., 144, 113 (1983)
Decker F, Pettinger B, Gerischer H, J. Electrochem. Soc., 130, 1336 (1983)
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Seo YH, Nahm KS, Lee KB, J. Electrochem. Soc., 140(5), 1453 (1993)
Seo YH, M.S. Thesis, Chonbuk National Univ., Chonju, Korea (1993)
Seo YH, Nahm KS, Lee KB, J. Vac. Sci. Technol. B, 11(1), 70 (1993)

[Referenced By]

[1] O'Commor JM, Dvorsky EF, Hier HS, Reif WP, J. Electrochem. Soc., 135, 190 (1988)

[2] Huo DT, Yan MF, Wynn JD, Wilt DP, J. Electrochem. Soc., 136, 3094 (1989)

[3] Booinger D, Iiga S, Matsumoto O, Solid State Technol., May, 111 (1984)

[4] Booinger D, Iiga S, Matsumoto O, Solid State Technol., June, 167 (1984)

[5] d'Aragona FS, J. Electrochem. Soc., 119, 948 (1972)

[6] Jenkins MW, J. Electrochem. Soc., 124, 757 (1977)

[7] Adachi S, Noguchi Y, Kawaguchi H, J. Electrochem. Soc., 129, 1526 (1982)

[8] Robbins H, Schwartz B, J. Electrochem. Soc., 106, 505 (1959)

[9] Robbins H, Schwartz B, J. Electrochem. Soc., 107, 108 (1960)

[10] Robbins H, Schwartz B, J. Electrochem. Soc., 123, 1903 (1976)

[11] Davis LE, "Handbook of Auger Electron Spectroscopy," Perkin-Elmer Co., Physical Electron Div., Minesota 55344 (1976)

[12] JCPDs (Joint Committee on Power Diffraction Standards), No. 7-217 (1977)

[13] Kelly JJ, Noyyen PHL, Electrochim. Acta, 29, 589 (1984)

[14] Seidel H, Csepregi L, Hewberger A, Baumgartel H, J. Electrochem. Soc., 137, 3512 (1990)

[15] Zhang XG, Collins SD, Smith RL, J. Electrochem. Soc., 136(5), 1561 (1989)

[16] Matsumura M, Morrison SR, J. Electroanal. Chem., 144, 113 (1983)

[17] Decker F, Pettinger B, Gerischer H, J. Electrochem. Soc., 130, 1336 (1983)

[18] Chzalviel JN, Etman M, Ozanam F, J. Electroanal. Chem., 297, 533 (1991)

[19] vanden Meerakker JEAM, van Vegchel JHC, J. Electrochem. Soc., 136(7), 1954 (1989)

[20] Seo YH, Nahm KS, Lee KB, J. Electrochem. Soc., 140(5), 1453 (1993)

[21] Seo YH, M.S. Thesis, Chonbuk National Univ., Chonju, Korea (1993)

[22] Seo YH, Nahm KS, Lee KB, J. Vac. Sci. Technol. B, 11(1), 70 (1993)