화학공학소재연구정보센터
Chemical Physics Letters, Vol.490, No.4-6, 234-237, 2010
Growth of high-quality ITO thin films at low temperature by tuning the oxygen flow rate using the nano-cluster deposition (NCD) technique
High quality indium tin oxide (ITO) thin films were grown by nano-cluster deposition (NCD) technique at a low temperature. The lowest resistivity (similar to 2 x 10(-4) Omega cm) and highest optical transparency (90%) were obtained for films deposited with optimum oxygen gas flow rate of 30 sccm (standard cc min(-1)). The absence of hydroxyl groups, organic contamination and carbon content in the films grown at a low temperature of 250 degrees C by NCD indicates the complete decomposition of metal-organic precursors. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved.