XPS STUDY ON OXIDE ETCH RESIDUE AND CLEANING

Kim JJ; Lee EG; Kim IN; Kim WS; Kim SM

Korean Journal of Chemical Engineering, Vol.9, No.4, 194-198, October, 1992

A layer structure, chemical composition and cleaning process of oxide dry etch residue on silicon substrate were studied. It was observed that the structure of the etch residue consisted of CF_x-polymer/ SiO_yC_z. The ratio of y and z in SiO_yC_z layer is monotonously changing with depth : y/z is maximum at the interface of CF_x-polymer and SiO_xC_z. and minimum at the interface of SiO_yC_z and silicon substrate. Two step cleaning was proposed : dry and wet cleaning. The most effective process was silicon light etch(CF₄/O₂ REMOTE PLASMA), followed by NH₄OH-H₂O₂ mixture and HF dip. From X-Ray Photoelectron Spectroscopy(XPS) data, it was found that oxide etch residue was completely removed by dry and wet cleaning.

[References]

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[1] Oehrlein GS, Clabes JG, Spirito P, J. Electrochem. Soc., 133, 1002 (1986)

[2] Kwon KH, Park HH, Lee SM, Kang SJ, Kwon OJ, Kim BW, Sung YK, J. Korean Vacuum Soc., 1, 145 (1992)

[3] D'agostino R, Cramarossa F, Fracassi F, Desimoni E, Sabbatini L, Zambonin PG, Caporiccio G, Thin Solid Films, 143, 163 (1986)

[4] Coyle GJ, Oehrlein GS, Appl. Phys. Lett., 47(6), 604 (1985)

[5] Oehrlein GS, Tromp RM, Tsang JC, Lee YH, Petrillo EJ, J. Electrochem. Soc., 132, 1441 (1985)

[6] Struck HP, Cerva H, Mohr EG, J. Electrochem. Soc., 135, 2876 (1988)

[7] Oehrlein GS, J. Appl. Phys., 59, 3053 (1986)